شمش و ویفر

Formula: Al

Applications: Aluminum is a widely used metal due to its low density, high strength-to-weight ratio, excellent corrosion resistance, and good thermal and electrical conductivity. It is used in a wide variety of applications, such as aircraft and automotive parts, beverage cans, building construction, electrical wiring, and cooking utensils. Its FCC crystal structure and high ductility make it a popular choice for metalworking and forming processes.

Technical Properties:

Chemical symbol: Al

Atomic number: 13

Atomic weight: 26.9815386 u

Melting point: 660.32 °C (1220.58 °F; 933.47 K)

Boiling point: 2519 °C (4566 °F; 2792 K)

Density: 2.70 g/cm³

Electrical conductivity: 37.7 × 10⁶ S/m

Thermal conductivity: 237 W/(m.K)

Young’s modulus: 70 GPa

Poisson’s ratio: 0.33

Physical Properties:

Color: Silvery-white

Luster: Metallic

Hardness: 2.75 on the Mohs scale

Ductility: High

Malleability: High

Tensile strength: 40-90 MPa (depending on the alloy)

Shear strength: 30-50 MPa (depending on the alloy)

Specific heat capacity: 0.90 J/(g·K)

Thermal expansion: 23.1 × 10^-6 K^-1

Crystallographic Properties:

Crystal structure: Face-centered cubic (FCC)

Lattice constant: 0.4049 nm

Coordination number: 12

Miller indices of the (100), (110), and (111)

crystallographic planes: (100) – (1 0 0), (110) – (1 1 0), (111) – (1 1 1)

Crystal growth conditions:

Crucible material: graphite

Atmosphere: Argon

سفارش بلور

Formula: Al₂O₃

Melting Point: 2037 °C

Applications: Sapphire is a transparent crystal that is used in a variety of applications, such as optical windows, watch faces, and LED substrates, optical window lenses, lens protection external lenses, Isolation windows, armored windows, wear-resistant windows / optical components, high temperature and impact resistant optical windows

Growth Method: EFG (Edge-Defined Film-Fed Growth)
Crystal Structure: hexagonal
Density (25°C): 3.97 g/cm³
Lattice Constant: a = 0.4763 nm
                                 c = 1.3003 nm

Standard Orientation: (0001) ± 0,3°    C – Plane
                                          (1102) ± 1°    R – Plane
                                          (1120) ± 1°    A – Plane
                                          (1010) ± 1°    M – Plane
Standard Sizes/Thickness: Ø 2 inch     330 μm, 430 μm
                                                  Ø 3 inch        430 μm
                                                  Ø 100 mm     530 μm
                                                  10 × 10 mm², 5 × 5 mm², …
special shape and size: on request
surface quality: one- or both side epipolished

Physical Properties:

Hardness: 9 (Mohs)
Tensile Strength: 2250 MPa
Compressive Strength: 2950 MPa
Young Modulus: 4.7 × 10⁵ MPa
Flexural Strength: 690 MPa
Specific Heat: 0.75 KJ/kg K (25°C)
Thermal Conductivity: 42 W/m.K (25°C)
                                            20 W/m.K (300°C)
                                            12 W/m.K (800°C)
Thermal Expansion: 5.3 × 10^-6 K^-1 (25°C) parallel to C-Axis
                                       4.5 × 10^-6 K^-1 (25°C) perpendicular to C-Axis

Dielectric Constant: 11.5 (25°C) parallel to C-Axis
                                        9.3 (25°C) perpendicular to C-Axis
Dielectric Strength: 4.8 × 104 KV/m
Loss Tangent:   < 10^-4
Resistivity: 10¹⁴ Ωm (25°C)
                      10⁹ Ωm (500°C)
Refractive Index n_o = 1.768
                                n_e = 1.760 (visible range)
                                1.814 (0.3 μm)
                                1.623 (5μm)
Transmission Range: 0.2 – 6.0 μm
Dispersion 0.011
Emittance: 0.02 (2.6 – 3.7 μm, 880 °C)

Crystal growth conditions:

Crucible material: Iridium

Atmosphere: Argon

Formula: Al₂O₃:Cr

Applications: Ruby is a red-colored crystal that is used in lasers and other optical applications.

Technical Properties:

Chemical formula: Al2O3 (with chromium impurities that give it its red color)

Crystal structure: Hexagonal

Melting point: 2030 °C (3686 °F; 2303 K)

Density: 3.97-4.05 g/cm³

Hardness: 9 on the Mohs scale

Thermal conductivity: 35-40 W/(m.K) (depending on the direction of measurement)

Thermal expansion: 5.8 × 10^-6 K^-1

Physical Properties:

Color: Red (can range from pinkish-red to purplish-red)

Transparency: Transparent to translucent

Refractive index: 1.762-1.778

Birefringence: 0.008

Dispersion: 0.018

Luster: Vitreous

Cleavage: None (conchoidal fracture)

Streak: White

Specific gravity: 3.97-4.05

Electrical conductivity: Insulator

Crystallographic Properties:

Crystal system: Trigonal

Crystal habit: Prismatic, tabular, bipyramidal

Twinning: Common (twinned along the rhombohedral plane)

Index of refraction varies with crystallographic orientation

Formula: Bi₄Ge₃O₁₂

Applications: BGO (bismuth germanate) crystals have several applications in the field of nuclear medicine and radiation detection. They are commonly used in PET (positron emission tomography) scanners to detect gamma rays emitted by radioactive tracers that are injected into the body. BGO crystals are also used in radiation detectors for applications such as environmental monitoring, nuclear physics research, and radiation therapy.

Technical Properties:

Chemical formula: Bi4Ge3O12

Crystal structure: Cubic

Melting point: 1050 °C (1922 °F; 1323 K)

Density: 7.13 g/cm³

Radiation length: 1.1 cm

Decay constant: 300 ns

Light yield: 8000 photons/MeV

Refractive index: 2.15 at 420 nm

Scintillation emission peak: 480 nm

Physical Properties:

Color: Colorless to light yellow

Transparency: Transparent to opaque

Luster: Vitreous

Cleavage: None (conchoidal fracture)

Streak: White

Specific gravity: 7.13

Thermal expansion: 5.8 × 10^-6 K^-1

Crystallographic Properties:

Crystal system: Cubic

Lattice constant: 1.199 nm

Index of refraction: 2.15 at 420 nm

Density of crystal: 7.13 g/cm³

Emission wavelength: 480 nm

Crystal growth conditions:

Crucible material: Platinum                                                                                             Atmosphere: Air

Formula: Bi₁₂GeO₂₀

Melting Point: 930 °C

Crystal growth conditions:

Crucible material: Platinum                                                                                             Atmosphere: Air

Formula: Bi₄Si₃O₁₂

Melting Point: 1050 °C

Crystal growth conditions:

Crucible material: Platinum                                                                                             Atmosphere: Air

Formula: Bi₁₂SiO₂₀

Melting Point: 900 °C

Crystal growth conditions:

Crucible material: Platinum                                                                                             Atmosphere: Air

Formula: CaF₂

Applications: Calcium fluoride is a transparent crystal that is used in optical applications, such as lenses, prisms, and windows.

Technical Properties:

Crystal structure: Cubic

Melting point: 1418 °C (2584 °F; 1691 K)

Boiling point: 2533 °C (4591 °F; 2806 K)

Density: 3.18 g/cm³

Refractive index: 1.434 at 589 nm

Dielectric constant: 6.76 at 1 MHz

Thermal conductivity: 10.5 W/(m.K)

Physical Properties:

Color: Colorless, but may be colored due to impurities

Transparency: Transparent to translucent

Luster: Vitreous

Cleavage: Perfect on {111}, Indistinct on {110} and {211}

Streak: White

Specific gravity: 3.18

Hardness: 4 on the Mohs scale

Thermal expansion: 18.85 × 10^-6 K^-1

Crystallographic Properties:

Crystal system: Cubic

Lattice constant: 0.546 nm

Index of refraction: 1.434 at 589 nm

Formula: CaWO₄

Melting Point: 1650 °C

Crystal growth conditions:

Crucible material: Rhodium                                                                                             Atmosphere: Air

Formula: CdWO₄

Melting Point: 1320 °C

Applications: Some of the key applications of CdWO4 crystals include medical imaging, homeland security, nuclear physics research, and environmental monitoring. CdWO4 is also used as a scintillation material in various other devices, such as radiation detectors for industrial applications and oil well logging.

Formula: Cu

Melting Point: 1080 °C

Crystal growth conditions:

Crucible material: graphite                                                                                             Atmosphere: Argon

Formula: DyScO₃

Growth Method: Czochralski
Crystal Structure: orthorombic, perovskite
Density (25°C): 6,9 g/cm³
Lattice Constant: a = 0,544 nm
                                 b = 0,571 nm
                                 c = 0,789 nm
Color: yellow

Physical Properties:
Melting Point: ca. 2400 K
Thermal Expansion: 8,4 × 10^-6 K^-1
Dielectric Constant: ~21 ( 1 MHz)
Band Gap: 5,7 eV

Orientation: (110)
Standard Size: 10 × 10 mm² , 10 × 5 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: GaAs

Application: Gallium arsenide is another semiconductor material that is used in high-speed electronic devices, such as microwave amplifiers and high-frequency transistors.

Melting Point: 1238 °C

Growth Method: LEC (liquid encapsulated Czochralski-technique)
Crystal Structure: zincblende / sphalerite, cubic
Standard Orientation: (100) ± 0,5°
                                          (111) ± 0,5°
                                          (110) ± 0,5°
Standard Sizes/
Standard Thickness:    Ø 2 inch      300 – 500 μm                                                                                                                        Ø 3 inch      500 μm

Lattice Constant: 0.5653 nm

                                                Semi-insulating       Semi-conducting      Semi-conducting
Dopant                                         Undoped                       Si, Te                                 Zn
Type of Conductivity                     N                                  N                                     P
Carrier Concentration (cm^-3)     –                               > 5 ×10¹⁷                         > 1 × 10¹⁸
Resistivity (Ωcm)                       > 1 × 10⁷                             –                                     –
EPD (cm^-2)                                 < 1 × 10⁵                        < 7 × 10⁴                         < 7 × 10⁴

Formula: GaP

Growth Method: LEC (liquid encapsulated Czochralski-technique)
Crystal Structure: zincblende / sphalerite, cubic
Standard Orientation: (100) ± 0.5°
                                          (111) ± 0.5°
                                          (110) ± 0.5°
Standard Sizes/
Standard Thickness:    Ø 2 inch      300 – 500 μm                                                                                                                        Ø 3 inch      500 μm

Lattice Constant: 0.5451 nm

                                               Semi-insulat.       Semi-cond.      Semi-cond.      Semi-cond.
Dopant                                            Cr                  Undoped                   S                        Zn
Type of Conductivity                   N                          N                        N                         P
Carrier Concentration (cm^-3)     –                   < 1 ×10¹⁶       1 ×10¹⁷ – 2 ×10¹⁸   1 ×10¹⁷ – 2 ×10¹⁸
Resistivity (Ωcm)                       > 1 × 10⁷                 –                           –                          –
EPD (cm^-2)                                 < 2 × 10⁵             < 2 × 10⁵            < 2 × 10⁵               < 2 × 10⁵

Formula: GaSb

Melting Point: 712 °C

Growth Method: LEC (liquid encapsulated Czochralski-technique)
Crystal Structure: zincblende / sphalerite, cubic
Standard Orientation: (100) ± 0,5°
                                          (111) ± 0,5°
                                          (110) ± 0,5°
Standard Sizes/
Standard Thickness:    Ø 2 inch      300 – 500 μm                                                                                                                        Ø 3 inch      500 μm

Lattice Constant: 0.6096 nm

                                             Semi-conducting       Semi-conducting      Semi-conducting
Dopant                                         Undoped                          Te                               Si, Ge
Type of Conductivity                     P                                  N                                     P
Carrier Concentration (cm^-3)     < 2 ×10¹⁶              2 ×10¹⁷ – 1.2 ×10¹⁸           3 ×10¹⁷– 5×10¹⁹
Resistivity (Ωcm)                             –                                  –                                     –
EPD (cm^-2)                                 < 5 × 10³                        < 5 × 10³                        < 5 × 10³

Crystal growth conditions:

Crucible material: graphite                                                                                             Atmosphere: Hydrogen

Formula: Ge

Melting Point: 937 °C

Applications: Germanium is a semiconductor material that is used in some electronic devices, such as transistors and diodes. It has a higher electron mobility than silicon, making it useful for high-speed applications. 35% for fiber-optics, 30% infrared optics, 15% polymerization catalysts, and 15% electronics and solar electric applications

Growth Method: Czochralski-technique
Crystal Structure: diamond, cubic
Density (25°C): 5,323 g/cm3
                             4,42 × 1022 atoms/cm3
Lattice Constant: 0,5657 nm
Standard Orientation: (100) ± 0,5°
                                          (111) ± 0,5°
                                          (110) ± 0,5°

Standard Sizes/ Standard Thickness: Ø 1 inch      300 μm
                                                                     Ø 2 inch      300 μm
                                                                     Ø 3 inch      300 μm
                                                                     Ø 100 mm   300 μm

Germanium one- or both side epipolished
Germanium with special orientation
Germanium with special shape

Physical Properties:

                                                                   Dislocation Density
Gallium (Ga) – doped, p – type
0,1…0,3 Ωcm, 1 – 10 Ωcm,                          < 500 cm^-2

Antimon (Sb) – doped, n – type
< 0,4 Ωcm, 1 – 10 Ωcm,                             < 500 cm^-2

Undoped
n – type
> 30 Ωcm                                                   < 500 cm^-2

Crystal growth conditions:

Crucible material: graphite/silica

Atmosphere: Argon + Hydrogen

سفارش بلور

Formula: GdScO₃

Growth Method: Czochralski
Crystal Structure: orthorombic, perovskite
Density (25°C): 6,6 g/cm³
Lattice Constant: a = 0,545 nm
b = 0,575 nm
c = 0,793 nm
Color: colorless

Physical Properties:
Melting Point: ca. 2400 K
Thermal Expansion: 10.9 × 10^-6 K^-1
Dielectric Constant: ~21 ( 1 MHz)
Band Gap: 5,7 eV

Orientation: (110)
Standard Size: 10 × 10 mm² , 10 × 5 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: InAs

Melting Point: 942 °C

Growth Method: LEC (liquid encapsulated Czochralski-technique)
Crystal Structure: zincblende / sphalerite, cubic
Standard Orientation: (100) ± 0,5°
(111) ± 0,5°
(110) ± 0,5°
Standard Sizes/
Standard Thickness:    Ø 2 inch      300 – 500 μm                                                                                                                  Ø 3 inch      500 μm

Lattice Constant: 0,6058 nm

                                             Semi-conducting       Semi-conducting      Semi-conducting
Dopant                                         Undoped                          S                                    Zn
Type of Conductivity                     P                                  N                                     P
Carrier Concentration (cm^-3)     < 2 ×10¹⁶                 1 – 8 ×10¹⁸                   1 ×10¹⁷– 2×10¹⁹
Resistivity (Ωcm)                             –                                  –                                     –
EPD (cm^-2)                                 < 5 × 10⁴                        < 5 × 10⁴                        < 5 × 10⁴

Formula: InP

Melting Point: 156.6 °C

Applications: Indium phosphide is a semiconductor material that is used in optoelectronic devices, such as photodiodes and high-speed transistors.

Growth Method: LEC (liquid encapsulated Czochralski-technique)
Crystal Structure: zincblende / sphalerite, cubic
Standard Orientation: (100) ± 0,5°
(111) ± 0,5°
(110) ± 0,5°
Standard Sizes/
Standard Thickness:    Ø 2 inch      300 – 500 μm                                                                                                                  Ø 3 inch      500 μm

Lattice Constant: 0,5869 nm

                                               Semi-insulat.       Semi-cond.      Semi-cond.      Semi-cond.
Dopant                                            Fe                  Undoped                   S                        Cd
Type of Conductivity                   N                          N                        N                         P
Carrier Concentration (cm^-3)     –         6 ×10¹⁵ – 3 ×10¹⁶      1 ×10¹⁷ – 2 ×10¹⁸   5 ×10¹⁷ – 3 ×10¹⁸
Resistivity (Ωcm)                       > 1 × 10⁷                 –                           –                          –
EPD (cm^-2)                                 < 1 × 10⁵             < 1 × 10⁵            < 5 × 10⁴               < 5 × 10³

Formula: InSb

Melting Point: 527 °C

Applications: terahertz radiation source – thermal imaging cameras – Thermal image detectors using photodiodes or photoelectromagnetic detectors-Magnetic field sensors using magnetoresistance or the Hall effect -Fast transistors 

Growth Method: LEC (liquid encapsulated Czochralski-technique)
Crystal Structure: zincblende / sphalerite, cubic
Standard Orientation: (100) ± 0,5°
(111) ± 0,5°
(110) ± 0,5°
Standard Sizes/
Standard Thickness:    Ø 2 inch      300 – 500 μm                                                                                                                  Ø 3 inch      500 μm

Lattice Constant: 0,6479 nm

                                             Semi-conducting       Semi-conducting      Semi-conducting
Dopant                                         Undoped                          Te                                  Ge
Type of Conductivity                     N                                  N                                     P
Carrier Concentration (cm^-3)     8 ×10¹³ – 2 ×10¹⁴      2 ×10¹⁴ – 3 ×10¹⁵         3 ×10¹³– 1×10¹⁸
Resistivity (Ωcm)                             –                                  –                                     –
EPD (cm^-2)                                     < 10³                             < 10³                             < 10³

Formula: KBr

Melting Point: 734 °C

Crystal growth conditions:

Crucible material: Chinese/Alumina/Platinum                                                                                             Atmosphere: Argon/Air

Formula: KCl

Melting Point: 771 °C

Crystal growth conditions:

Crucible material: Chinese/Alumina/Platinum                                                                                             Atmosphere: Argon/Air

Formula: KI

Melting Point: 681 °C

Crystal growth conditions:

Crucible material: graphite/Platinum                                                                                             Atmosphere: Argon

Formula: LaAlO₃

Growth Method: Czochralski
Crystal Structure: pseudo-cubic,
                                   with micro twins parallel (100)
Density (25°C): 6.51 g/cm³
Lattice Constant: a = 0,3821 nm
Color: colorless to pale pink

Physical Properties:
Melting Point: 2380 K
Hardness: 6.0 (Mohs)
Thermal Conductivity: 10 W/m K (100°C)
Thermal Expansion: 10 × 10^-6 K^-1
Dielectric Constant: ~23,5
Loss Tangent: 6 × 10^-5 ( 77 K, 10 GHz)
Refractive Index: n = 2.0
Absorbtion Coef.: 0.55  mm^-1

Orientation: (100), (110), (111)
Standard Size: 1″, 2″, 3″, 10 × 10 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: LaF₂

Applications: LaF2 crystals have several applications in the field of optics. They are commonly used as optical components, such as lenses, prisms, and windows, in UV and IR optical systems. LaF2 is often preferred over other materials, such as fused silica or sapphire, for these applications due to its high refractive index, which allows for high optical power and resolution, as well as its low dispersion, which reduces the risk of chromatic aberration. LaF2 is also used as a substrate for thin-film deposition, such as the growth of thin films of other materials for various electronic or optical applications.

Melting Point: 1493 °C

Growth Method: Czochralski

Formula: LiAlO₂

Growth Method: czochralski
Crystal Structure: tetragonal
Density (25°C): 2.62 g/cm³
Lattice Constant: a = 0.517 nm
                                 c = 0.627 nm
Color: colorless

Physical Properties:
Melting Point: 2000 K
Hardness: 6.5 (Mohs)
Thermal Expansion: || a: 7 × 10^-6 K^-1
                                       || c: 15 × 10^-6 K^-1

Orientation: (100), (001), (111)
Standard Size: 1″, 10 × 10 mm² , 10 × 5 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: Li₂B₄O₇

Melting Point: 930 °C

Crystal growth conditions:

Crucible material: Platinum                                                                                             Atmosphere: Air

Formula: LiBr

Melting Point: 550 °C

Crystal growth conditions:

Crucible material: graphite/Alumina/Platinum                                                                                             Atmosphere: Argon

Formula: LiCl

Melting Point: 610 °C

Crystal growth conditions:

Crucible material: graphite/Alumina/Platinum                                                                                             Atmosphere: Argon

Formula: LiF

Melting Point: 870 °C

Applications: UV optics X-ray spectrometry/ Thermoluminescent dosimeter/ Measurement of radiation intake/ PLED and OLED laser media – Luminescence Detectors

Crystal growth conditions:

Crucible material: graphite/Platinum                                                                                             Atmosphere: Argon/Air

Formula: LiNbO₃

Melting Point:  °C

Applications: Lithium niobate is a piezoelectric material that is used in sensors, actuators, and other electronic devices.

Formula: LiTaO₃

Melting Point: 1650 °C

Applications:  pyroelectric devices and color television

Crystal growth conditions:

Crucible material: Iridium                                                                                             Atmosphere: Air

Formula: LSAT:: (LaAlO₃)_0.3 – (Sr₂AlTaO₆)_0.7

Growth Method: czochralski
Crystal Structure: pseudocubic, twinfree
Density (25°C): 6.74 g/cm³
Lattice Constant: a = 0.3868 nm
Color: colorless – pale yellow

Physical Properties:
Melting Point: 2110 K
Hardness: 6.5 (Mohs)
Thermal Expansion: 8.2 × 10^-6 K^-1
Dielectric Constant: 22.7 ( 1 MHz)
Loss tangent: 2 × 10^-4 (77 K, 8.8 GHz)

Orientation: (100), (110), (111)
Standard Size: 1″, 2″, 10 × 10 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: MgF₂

Melting Point: 1263 °C

Applications: magnesium fluoride crystals have several applications in the field of optics. They are commonly used as optical components, such as lenses, prisms, and windows, in UV and IR optical systems. MgF2 is often preferred over other materials, such as fused silica or sapphire, for these applications due to its high transparency in the UV and IR regions and its low refractive index, which reduces the risk of unwanted reflections and glare. MgF2 is also used as a substrate for thin-film deposition, such as the growth of thin films of other materials for various electronic or optical applications.

Formula: MgO

Growth Method: arc fusion
Crystal Structure: cubic, twin free
Cleavage: (100)
Density (25°C): 3.58 g/cm³
Lattice Constant: a = 0,4212 nm
Color: colorless

Physical Properties
Melting Point: 3050 K
Hardness: 5.8 (Mohs)
Thermal Conductivity: ~30 W/m K
Thermal Expansion: 14 × 10^-6 K^-1
Dielectric Constant: 9.6
Loss Tangent: 3.3 × 10^-7
Refractive Index: n = 1.77
Transmission Range: 0.2 – 8 μm
other: hygroscopic

Orientation: (100), (110), (111)
Standard Size: 1″, 2″, 10 × 10 mm² , 20 × 20 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: NaBr

Melting Point: 747 °C

Crystal growth conditions:

Crucible material: Chinese/Alumina/Platinum                                                                                             Atmosphere: Argon/Air

Formula: NaCl

Melting Point: 801 °C

Crystal growth conditions:

Crucible material: Chinese/Alumina/Platinum                                                                                             Atmosphere: Argon/Air

Formula: NaF

Melting Point: 996 °C

Crystal growth conditions:

Crucible material: graphite/Platinum                                                                                             Atmosphere: Argon/Air

Formula: NaI

Melting Point: 660 °C

Applications: Scintillation Detector – gamma cameras, measuring environmental radiation including for radiation emission levels from nuclear reactors, analysis equipment that has been used for radiation measurement

Crystal growth conditions:

Crucible material: graphite/Platinum                                                                                             Atmosphere: Argon

Formula: NdGaO₃

Growth Method: Czochralski
Crystal Structure: orthorhombic
Density (25°C): 7.57 g/cm³
Lattice Constant: a = 0.543 nm
                                 b = 0.550 nm
                                 c = 0.771 nm
Color: dark red to violet

Physical Properties:
Melting Point: 1870 K
Hardness: 5.9 (Mohs)
Thermal Expansion: 9 × 10^-6 K^-1
Dielectric Constant: 20
Loss Tangent: 3 × 10^-3

Orientation: (110), (100), (001)
Standard Size: Ø 1″, Ø 2″, 10 × 10 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: Si

Application: Silicon is one of the most widely used semiconductors in the electronics industry. It can be doped with various impurities to create p-type or n-type semiconductors for use in transistors, solar cells, and other electronic devices.

Melting Point: 1418 °C

Growth Method: Czochralski – technique, Floating Zone
Crystal Structure: diamond, cubic
Density (25°C): 2,33 g/cm3
5×10²²  atoms/cm3
Lattice Constant: 0,5431 nm
Standard Orientation: (100) ± 0,5°
(111) ± 0,5°
(110) ± 0,5°
Standard Sizes/
Standard Thickness: Ø 1 inch      ≥ 375 μm
Ø 2 inch          275 μm
Ø 3 inch          375 μm
Ø 100 mm       525 μm
Ø 125 mm       625 μm
Ø 150 mm       675 μm

Silicon with other thickness
Ø 2 inch           50 μm – 10 mm
Ø 3 inch           60 μm – 10 mm
Ø 100 mm       100 μm – 10 mm

Silicon one- or both side epipolished
Silicon with special orientation
Silicon with special shape

Physical Properties:

Boron – doped, p – type
0,1…20 Ωcm, 20…60 Ωcm,
> 100 Ωcm

Boron – doped, p – type
0,005…0,020 Ωcm

Phosphorus – doped, n – type
0,1…10 Ωcm, 10…50 Ωcm,
> 100 Ωcm

Arsenic – doped, n – type
0,008….0,020 Ωcm

Antimony – doped, n – type
0,001…0,007 Ωcm

Floating Material
undoped, p /n – type
> 1000 Ωcm
With spec. Resistance
> 5000 Ωcm

Thermal Oxidation
Ø 2 inch, Ø 3 inch and Ø 100 mm with:      50 nm, 300 nm, 600 nm, 1000 nm Oxide
Nitridefilms
Ø 2 inch, Ø 3 inch and Ø 100 mm with:     10 nm Oxide, 50 nm…200 nm Si3N4

Crystal growth conditions:

Crucible material: Silica

Atmosphere: Argon

سفارش بلور

Formula: SrLaAlO₄

Growth Method: Czochralski
Crystal Structure: tetragonal
Density (25°C): 5.92 g/cm³
Lattice Constant: a = 0.375 nm
                                 c = 1.263 nm
Colour: yellow

Physical Properties:
Melting Point: 1920 K
Hardness: 7 (Mohs)
Thermal Expansion: 10 × 10^-6 K^-1
Dielectric Constant: 17
Loss Tangent: 8 × 10^-4

Orientation: (100), (001), (110)
Standard Size: 10 × 10 mm² , 20 × 20 mm²
15 × 15 mm² , 5 × 5 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: SrLaGaO₄

Growth Method: Czochralski
Crystal Structure: tetragonal
Density (25°C): 6.39 g/cm³
Lattice Constant: a = 0.384 nm
                                 c = 1.268 nm
Colour: yellow to green

Physical Properties:
Melting Point: 1790K
Hardness: – (Mohs)
Thermal Expansion: 10 × 10^-6 K^-1
Dielectric Constant: 22
Loss Tangent: 5.7 × 10^-5

Orientation: (100), (001), (110)
Standard Size: 10 × 10 mm² , 15 × 15 mm²
10 × 5 mm² , 5 × 5 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: SrTiO₃

Growth Method: Verneuil
Crystal Structure: cubic, twinfree,
                                   Perovskite structure
                                   at 105.5 K phase transition to tetragonal
Density (25°C): 5.12 g/cm³
Lattice Constant: a = 0,3905 nm
Color: colorless to pale yellow

Physical Properties:
Melting Point: 2353 K
Hardness: 6.0 – 6.5 (Mohs)
Thermal Conductivity: 12 W/m K (100°C)
Thermal Expansion: 9 × 10^-6 K^-1
Dielectric Constant: 300
Loss Tangent: 2×10^-2 ( 77 K, 10 GHz)
Refractive Index: n = 2.41
Reciprocal Dispersion: 13
Transmission Range: 0.395 – 5 μm

Orientation: (100), (110), (111)
Standard Size: 10 × 10 mm² , 10 × 5 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: TiO₂

Applications: Titanium dioxide is a white-colored crystal that is used in a variety of applications, such as pigments, coatings, and photocatalysts.

Growth Method: Verneuill
Crystal Structure: tetragonal
Density (25°C): 4.26 g/cm³
Lattice Constant: a = b = 0.459 nm
c = c: 0.296 nm                                 
Color: pale yellow (fully oxidized)

Physical Properties:
Melting Point: 2100 K
Hardness: 6.5 (Mohs)
Thermal Conductivity: 12,6 W/m K || C
                                             8,8 W/m K ┴ C
Thermal Expansion: 9,2 × 10^-6 K^-1 || C
                                       9,2 × 10^-6 K^-1 ┴ C
Dielectric Constant: 200
Refractive Index: n_a = 2.84
                                  n_o = 2.55
Transmission Range: 0.42 – 5 μm

Orientation: (100), (001), (110), (111)
Standard Size: 10 × 10 mm² , 10 × 5 mm² , 5 × 5 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: Y₃Fe₅O₁₂

Applications: Yttrium iron garnet is a magnetic material that is used in microwave devices, such as isolators and circulators.

Growth Method: czochralski

Formula: YSZ – Y:ZrO₂

Growth Method: skull melting method
Crystal Structure: cubic
Density (25°C): 5.9 g/cm³
Lattice Constant: a = 0,512 nm
Color: colorless

Physical Properties:
Melting Point: 2780 °C
Hardness: 8.7 (Mohs)
Thermal Conductivity: 1.8 W/m K
Thermal Expansion: 9.2 × 10^-6 K^-1
Dielectric Constant: 27 (?)
Refractive Index: n = 2.15
Dispersion: 0.06
Transmission range: 0.4 – 6.5 μm

Orientation: (100), (110), (111)
Standard Size: 1″, 2″, 10 × 10 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: Zn

Melting Point: 419 °C

Crystal growth conditions:

Crucible material: graphite/Alumina/Platinum                                                                                             Atmosphere: vacuum/Argon

Formula: ZnO

Applications: Zinc oxide is a semiconductor material that is used in UV sensors, transparent conductive coatings, and piezoelectric devices.

Growth Method: hydrothermal
Crystal Structure: hexagonal
Density (25°C): 5.7 g/cm³
Lattice Constant: a = 0,325 nm
                                 c = 0,313
Color: colorless to pale green

Physical Properties:
Melting Point: 2250 K
Hardness: 4 (Mohs)
Thermal Conductivity: 2,5 W/m K
Thermal Expansion: 3,2 × 10^-6 K^-1
Dielectric Constant: 8,5
Band Gap: 3,2 eV
Refractive Index: n_o = 2.026
                                  n_c = 2.041
Reciprocal Dispersion: 13
Transmission Range: 0.395 – 5 μm

Orientation: (0001)
Standard Size: 10 × 10 mm² , 10 × 5 mm²
Standard Thickness: 0.5 mm, 1 mm
Surface: one- or both side epipolished

Formula: ZnSe

Applications: Zinc selenide is a transparent crystal that is used in optical applications, such as lenses, windows, and prisms.

Growth Method: hydrothermal

Melting Point: 2250 K

Formula: ZnWO₄

Melting Point: 1200 °C

Crystal growth conditions:

Crucible material: Platinum                                                                                             Atmosphere: Air